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| SI4856DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFETS D 100% RG Tested ID (A) 17 14 rDS(on) (W) 0.006 @ VGS = 10 V 0.0085 @ VGS = 4.5 V APPLICATIONS D Buck Converter D Synchronous Rectifier - Secondary Rectifier D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 17 Steady State Unit V 12 9 "50 A 1.40 1.6 1.0 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 14 2.7 3.0 2.0 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71881 S-03662--Rev. B, 03-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 34 67 15 Maximum 41 80 19 Unit _C/W 1 SI4856DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 14 A VDS = 15 V, ID = 17 A IS = 2.7 A, VGS = 0 V 40 0.0046 0.0066 57 0.72 1.1 0.006 0.0085 S V 1.0 3.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 17 A 21 8 7.2 1.5 16 10 57 16 40 2.6 25 20 90 25 70 ns W 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 50 60 Transfer Characteristics I D - Drain Current (A) 40 I D - Drain Current (A) 40 30 30 20 3V 10 20 TC = 125_C 25_C - 55_C 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71881 S-03662--Rev. B, 03-Apr-03 SI4856DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.010 3500 Ciss r DS(on) - On-Resistance ( W ) 0.008 C - Capacitance (pF) VGS = 4.5 V 2800 Vishay Siliconix Capacitance 0.006 VGS = 10 V 0.004 2100 1400 Coss 0.002 700 Crss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 17 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 17 A 4 r DS(on) - On-Resistance (W) (Normalized) 5 1.4 1.2 3 1.0 2 1 0.8 0 0 6 12 18 24 30 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.025 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.020 I S - Source Current (A) 0.015 0.010 ID = 17 A 0.005 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71881 S-03662--Rev. B, 03-Apr-03 www.vishay.com 3 SI4856DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 200 Single Pulse Power 0.2 V GS(th) Variance (V) 160 Power (W) - 0.0 120 - 0.2 80 - 0.4 40 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 1 ms VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 71881 S-03662--Rev. B, 03-Apr-03 SI4856DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71881 S-03662--Rev. B, 03-Apr-03 www.vishay.com 5 |
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